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Beilstein J. Nanotechnol. 2015, 6, 583–594, doi:10.3762/bjnano.6.60
Figure 1: Top: the electrostatic pressure resulting from a dc voltage drop on the insulating molecular monola...
Figure 2: Imaginary electrical modulus M″(ω) of the Hg/acid 5/n-type Si junction: a) reverse-bias dependence ...
Figure 3: Decomposition of the electrical modulus M″(ω) obtained at T = 263 K and VDC = −0.6 V into three dip...
Figure 4: Temperature dependence of the dipolar relaxation frequencies fB1 (a) and fB2 (b) obtained for the H...
Figure 5: Bias dependence of dipolar relaxation activation energies, EB1 (squares) and EB2 (circles). The lin...
Figure 6: Linear correlation between activation energy and pre-exponential factor values derived from Figure 4, for p...
Figure 7: Temperature dependence of the dipolar relaxation strength Δε of peaks B1 and B2, measured at revers...